840nm VCSEL阵列湿法氧化研究  

Study on Wet Oxidation of 840 nm VCSEL Array

作　　者：侯立峰[1] 钟景昌[1] 赵英杰[1] 郝永芹[1] 冯源[1] 谢浩锐[1] 姜晓光[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室

出　　处：《半导体技术》2008年第6期473-476,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60306004)

摘　　要：湿法氧化工艺已经成为制备垂直腔面发射激光器(VCSEL)及其阵列的关键技术,为提高器件的散热性能,对单元器件采用环行分布孔的氧化窗口,优化设计了分布孔的数目与间距,同时从瞬态热传导方程对构成激光器阵列单元器件的热相互作用进行了理论的分析。采用湿法氧化工艺制备了840 nm、3×3二维VCSEL阵列,对阵列器件的光电特性、光谱及近场等进行了测量,证明器件性能良好。Wet oxidation is a key technology in fabrication of VCSEL and their array, in order to improve VCSEL thermal characteristics, devices with ring distributed perforations were made. The design of the number and the distance of the perforations were optimized. The thermal interaction between individual elements in lasers array were studied with the transient thermal conduction function. In the experiments, the 840 nm 3 × 3 2-D VCSEL array devices were fabricated characteristics such as near field, emission spectrum, and through the wet oxidation technique, and the output power were measured. It reveals that the devices are with good performance.

关 键 词：垂直腔面发射激光器 阵列 湿法氧化 热相互作用 

分 类 号：TN248.4[电子电信—物理电子学]