巨磁电阻效应简述及其应用  

GMR effect and Its Applications

作　　者：韩振华[1] 张建[1] 刘楚湘[1] 

机构地区：[1]新疆师范大学数理信息学院,新疆乌鲁木齐830054

出　　处：《新疆师范大学学报（自然科学版）》2008年第2期71-75,共5页Journal of Xinjiang Normal University(Natural Sciences Edition)

摘　　要：巨磁电阻效应是近年来磁电阻领域的一项重要的发现,发展了将近二十多年。许多新型的磁电子器件因此应运而生,并对产业和经济产生了巨大的影响。文章简单介绍了巨磁电阻效应的发展和基本原理,并重点介绍了巨磁电阻效应在四个方面的主要应用。GMR effect is the important and latest discovery in the magnetoelectric research which has developed for almost twenty years. A series of new magnetoelectric apparatus has been rapidly invented, which has a far--reaching impact on productive fields and has acquired an enormous economic effect. In this paper we introduce the development of GMR effect, explain its principles and recommend its applications in four aspects.

关 键 词：磁电阻效应 巨磁电阻效应 高密度硬盘 薄膜感应式读出磁头 随机存储器 巨磁电阻传感器 

分 类 号：O441.4[理学—电磁学]