微腔中单量子点的受激辐射行为研究  

Stimulated Emission Behavior of Single Quantum Dot in Microcavity

作　　者：廖庆洪[1] 刘正东[1] 尤素萍[1] 曹昌祺[2] 

机构地区：[1]南昌大学近代物理研究所 [2]北京大学物理系,北京100080

出　　处：《光子学报》2008年第5期883-886,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(60278016,10464002)资助

摘　　要：研究了微腔中单模光场与一个三能级量子点相互作用系统.利用系统主方程作数值模拟计算微腔中单量子点的净受激辐射率随量子点和腔模耦合强度的变化,同时研究激光能级间衰减率γ23对净受激辐射率的影响.发现净受激辐射率随泵浦强度增大而呈现较快趋于饱和的曲线,这些饱和曲线随着耦合强度的增加又较快地趋于一个极值.而激光能级间衰减率γ23的增大使该激光的净受激辐射率的曲线组表现出相反的规律.A system consisted of a three-level quantum dot coupled to a single mode of an optical microcavity is investigated. Using the numerical calculation method, the net stimulated emission dynamical evolution with the variation of the coupling strength between the quantum dot and the single mode of the optical microcavity is studied, which is based on quantum-optical master equations. The effect of the decay rate between the laser levels on the net stimulated emission is also studied. When the coupling strength between the quantum dot and the single mode of the optical cavity is larger, the net stimulated emission is prone to a saturation curve sooner. These saturation curves get to a limit value with the increasing value of the coupling strength sooner. The net stimulated emission curves show the opposite law with the increasing value of the decay rate between the laser levels.

关 键 词：量子点 受激辐射 激光 

分 类 号：O431.2[机械工程—光学工程]