抽运光分布对Nd：YAG微片激光器热效应的影响  

Influence of Pump Light Distribution on Thermal Effects within Nd:YAG Microchip Laser

作　　者：史彭[1] 李金平[1] 李隆[1] 甘安生[1] 

机构地区：[1]西安建筑科技大学理学院,陕西西安710055

出　　处：《中国激光》2008年第5期643-646,共4页Chinese Journal of Lasers

基　　金：陕西省教育厅专项科研基金(06JK251)资助课题

摘　　要：以半解析热分析理论为基础,研究超高斯分布激光二极管(LD)端面抽运背冷式微片Nd:YAG晶体的热效应。通过对超高斯分布激光二极管端面抽运背冷式微片Nd:YAG晶体工作特点分析建立热模型,利用热传导方程新的求解方法得出微片Nd:YAG晶体内部温度场、热形变场、附加光程差(OPD)半解析计算表达式;利用附加光程差得出微片Nd:YAG晶体的热焦距计算表达式。研究结果表明,当使用总功率为24.2 kW,10%占空比4阶超高斯分布激光二极管抽运时,微片上获得70.36℃最高温升,0.465μm最大热形变,0.836μm最大附加光程差。Based on the theory of semi analytical thermal analysis, the thermal effects of the diode-end-pumped Nd： YAG microchip crystal with back surface cooling were investigated. A thermal model that matches actual working state of the laser crystal is established by analyzing the working characteristics of the Nd： YAG microchip crystal. Through using a new method to solve the heat conduction equation of isotropic material, a general expression of temperature field, thermal distortion field and additional optical path differences （OPD） within Nd： YAG microchip crystal was obtained respectively. Calculation expression of thermal focal length of the Nd： YAG microchip crystal was obtained hy analyzing the additional OPD caused by heat. Research results show that a maximum temperature rise is 70.36 ℃ , a maximum thermal distortion is 0. 465 μm and a maximum additional OPD is 0. 836 μm when the LD pump light is fourth rank of super-Gaussian distribution, the total power is 24.2 kW,and the duty cycle is 10%.

关 键 词：激光技术 微片激光器 ND:YAG晶体 热分析 超高斯分布 背冷 

分 类 号：TN248.1[电子电信—物理电子学]