碲欠电位沉积于金衬底上碲离子浓度和扫描速率对欠电位的影响  

Effects of Concentration and Scan Rate on Te Underpotential Deposition on Au Substrate

作　　者：朱文[1] 杨君友[1] 周东祥[2] 肖承京[1] 段兴凯[1] 

机构地区：[1]华中科技大学模具技术国家重点实验室,武汉430074 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《应用化学》2008年第6期633-636,共4页Chinese Journal of Applied Chemistry

基　　金：国家基础研究计划(“九七三”计划)预研项目(2004CCA03200);国家自然科学基金(50401008);中国博士后基金(20060390843)资助项;教育部新世纪优秀人才计划(NCET-06-0644);教育部科技创新工程重大培育项目(707044)

摘　　要：研究了碲欠电位沉积于金衬底表面体系中碲离子浓度和扫描速率等关键实验参数对碲欠电位沉积机制及其伏安特性的影响。结果表明,碲沉积在金表面的伏安特性依赖于使用的碲离子浓度,金属离子浓度的变化可能会影响到欠电位沉积过程的动力学机制。循环伏安实验结果表明,碲欠电位峰的电流与扫描速率的2/3次方呈线性关系。证实碲欠电位沉积于金衬底上遵循的是二维形核和生长机制。The effects of pivotal experimental parameters, such as Te ion concentration and scan rate, on the mechanism of Te underpotential deposition （UPD） and its voltammetry characterization were studied with a system of Te underpotential deposition on Au substrate. The results show that the vohammetry characterization of Te underpotential deposition on Au surface was dependent on the Te ion concentration, and the variation in the metal ion concentration may affect the kinetics of the UPD process. Scan rate dependent eyelie voltammetry experiments reveal that the peak current of the Te UPD peak is not a linear function of the scan rate, v, but a linear function of a 2/3 power of the scan rate, v^2/3. It was confirmed that Te UPD on Au obeyed a two-dimensional nucleation and growth mechanism.

关 键 词：电化学原子层外延 欠电位沉积 碲 热电材料 

分 类 号：O646[理学—物理化学] TN377[理学—化学]