不同磁场退火方式FeZrBCu薄膜巨磁阻抗效应比较  

Comparisons of Giant Magneto-impedance Effect of FeZrBCu Films Annealed Under Magnetic Field with Different Modes

作　　者：邵先亦[1] 陈卫平[1] 

机构地区：[1]台州学院信息与电子工程学院物理系,浙江临海317000

出　　处：《磁性材料及器件》2008年第2期17-20,共4页Journal of Magnetic Materials and Devices

基　　金：浙江省教育厅资助项目(20050050)

摘　　要：用射频溅射法制备了(Fe88Zr7B5)0.97Cu0.03软磁合金薄膜,研究了不同磁场退火方式对薄膜磁导率和巨磁阻抗(GMI)效应的影响。结果表明,纵向和横向磁场退火都能有效地提高薄膜样品的巨磁阻抗效应,在13MHz频率下纵向最大GMI比分别为18.6%和17%;纵向磁场退火后薄膜样品的横向磁各向异性消失,横向磁场退火则能有效增强横向磁各向异性,提高巨磁阻抗效应的磁场响应灵敏度;磁场诱导的磁导率变化是巨磁阻抗效应变化的主要原因。The （Fe88Zr7B5）0.97Cu0.03 films were deposited by radio frequency sputtering on the substrate of single crystal Si. The GMI effects and permeability of samples annealed in a field with different modes have been studied. The obtained results showed that the GMI Patios could be improved observably by longitudinal and transverse field annealing, with the maximum longitudinal GMI ratios being 18,6% and 17% at the frequency of 13 MHz, respectively. It is also revealed that longitudinal field annealing could effectively relieve transverse magnetic anisotropy, transverse annealing could effectively induce transverse magnetic anisotropy and improve the field sensitivity of longitudinal GMI. The GMI effect attributes mainly to the field-induced change of permeability.

关 键 词：FeZrBCu薄膜 巨磁阻抗效应 磁场退火 感生各向异性 磁导率 

分 类 号：TM271.2[一般工业技术—材料科学与工程] O484.4[电气工程—电工理论与新技术]