溶胶-凝胶法制备低折射率和低介电常数介孔二氧化硅薄膜(英文)  

Preparation of Low-k and Low-n Mesoporous Silica Films via Sol-Gel Process

作　　者：沈军[1] 欧阳玲[1] 林雪晶[1] 谢志勇[1] 罗爱云[1] 

机构地区：[1]同济大学波耳固体物理研究所,上海200092

出　　处：《稀有金属材料与工程》2008年第A02期76-79,共4页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(Grant No.20133040,69978017,50572073);Chinese National Foundation of High Technology(2002AA842052);Shanghai Key Subject Program,Shanghai Phosphor Program(05QMH1413);Trans-Century Training Program Foundation for the Talents by the State Education Commission

摘　　要：采用溶胶-凝胶技术,蒸发诱导自组装法(EISA)工艺制备了二氧化硅透明有序介孔薄膜。以十六烷基三甲基溴化铵(CTAB)作为模板剂,正硅酸乙酯(TEOS)为硅源前驱体,基片采用双面抛光的硅片,利用提拉法制备薄膜。经过表面修饰剂六甲基二硅胺烷(HMDS)修饰后,薄膜具有疏水性能,而且薄膜的二氧化硅骨架结构更稳定。由椭偏仪测得热处理后的薄膜的折射率低至1.18,而薄膜的介电常数为2.14。Mesoporous silica films were successfully prepared through sol-gel process with evaporation-induced self-assembly Tetraethoxysilane （TEOS） was used as silica precursor and Cetyltrimethylammonium bromide （CTAB） as the templating agent. The films were deposited on the silicon wafer or glass substrate using a dip-coating method. The refractive index（κ） of the mesoporous films was 1.18, while the dielectric constant（n） was 2.14.

关 键 词：介孔薄膜 溶胶-凝胶 低折射率 低介电常数 

分 类 号：TB43[一般工业技术]