金属氧化物半导体场效应晶体管剂量探测器的工作原理及在放射治疗中的应用  

The principle and application of metal oxide semiconductor field effect transistor detector during radiotherapy

作　　者：倪园园[1] 涂彧[1] 

机构地区：[1]苏州大学放射医学与公共卫生学院放射卫生教研室,215123

出　　处：《国际放射医学核医学杂志》2008年第2期125-127,共3页International Journal of Radiation Medicine and Nuclear Medicine

摘　　要：金属氧化物半导体场效应晶体管（MOSFET）探测器原用于空间系统的辐射测量，近几年才引入到医学领域。由于该探测器具有普通探测设备无法比拟的优点，凶此在临床有广泛的应用前景。通过概述MOSFET20探测器的基本工作原理、剂量探测原理及其相关特性，介绍了MOSFET探测器在放射治疗中的应用。Metal oxide semiconductor field effect transistor （MOSFET） detector was used to measure radiation dose in space initially, and it was applied to medical domain in recent years. MOSFET detector had extent prospect in clinical field because it had the advantages that other nomal detectors couldn＇ t compare with. This article introduced the application of MOSFET detector in radiotherapy by summarizing its basic principle, the principle of measuring dose and the relative characteristics.

关 键 词：辐射监测 放射疗法 辐射剂量 金属氧化物半导体场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]