Spin Splitting in In0.53Ga0.47As/InP Heterostructures  

作　　者：商丽燕 俞国林 林铁 周文政 郭少令 戴宁 褚君浩 

机构地区：[1]National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 [2]Physicals Science and Technology College, Guangxi University, Nanning 530004

出　　处：《Chinese Physics Letters》2008年第6期2194-2197,共4页中国物理快报（英文版）

基　　金：Supported by the Special Funds for Major State Basic Research Project under Grant No 2007CB924901, the National Natural Science Foundation of China under Grant No 60221502, the Knowledge Innovation Programme of Chinese Academy of Sciences under Grant No C2-12, and Science and Technology Commission of Shanghai under Grant No 07JC14059.

摘　　要：Spin-orbit coupling in a gate-controlled In0.53 Ga0.47 As/InP quantum well is investigated in the presence of a large Zeeman effect. We develop a fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare 9 factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47 As.Spin-orbit coupling in a gate-controlled In0.53 Ga0.47 As/InP quantum well is investigated in the presence of a large Zeeman effect. We develop a fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare 9 factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47 As.

关 键 词：2-DIMENSIONAL ELECTRON-GAS HETEROJUNCTIONS RESONANCE TRANSPORT SYSTEMS 

分 类 号：TN304[电子电信—物理电子学]