Optimization of （002）-Oriented ZnO Film Synthesis in Sol-Gel Process and Film Photoluminescence Property  

作　　者：闫军锋 赵丽丽 张志勇 

机构地区：[1]School of Information Science and Technology, Northwest University, Xi'an 710069

出　　处：《Chinese Physics Letters》2008年第6期2253-2256,共4页中国物理快报（英文版）

基　　金：Supported by the Natural Science Foundation of Shaanxi Province under Grant No 2005F39, and the Applied Materials Innovation Fund of Xi＇an under Grant No AM07012.

摘　　要：By orthogonal design theory, technological parameters of the （002）-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly （002）-oriented ZnO film is obtained. As a result, it is proven that the Zn^2＋ concentration is the most important factor to grow a highly （002）-oriented ZnO film. We take an appropriate Zn^2＋ concentration 0.35mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn^2＋ concentrations precursor solution. The Zn^2＋ concentration either larger or smaller than 0.35 mol/L leads to the （002）-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly （002）-oriented film.By orthogonal design theory, technological parameters of the （002）-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly （002）-oriented ZnO film is obtained. As a result, it is proven that the Zn^2＋ concentration is the most important factor to grow a highly （002）-oriented ZnO film. We take an appropriate Zn^2＋ concentration 0.35mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn^2＋ concentrations precursor solution. The Zn^2＋ concentration either larger or smaller than 0.35 mol/L leads to the （002）-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly （002）-oriented film.

关 键 词：DESIGN 

分 类 号：O484.41[理学—固体物理]