Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation  

作　　者：高勇 刘静 杨媛 

机构地区：[1]Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048

出　　处：《Chinese Physics Letters》2008年第6期2285-2288,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50477012, and the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20050700006.

摘　　要：Temperature-dependent characteristics of SiGeC p-i-n diodes axe analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400 K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300 K to 400 K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400 K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400 K.Temperature-dependent characteristics of SiGeC p-i-n diodes axe analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400 K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300 K to 400 K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400 K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400 K.

关 键 词：supernova explosion proto-neutron star shock wave 

分 类 号：TN312[电子电信—物理电子学]