无掩膜激光辅助刻蚀GaAs图形中的衍射条纹分布  

Diffractive characteristics of laser assisted chemical etching GaAs

作　　者：刘旭[1] 吴云峰[1] 叶玉堂[1] 刘霖[1] 陈镇龙[1] 田骁[1] 罗颖[1] 王昱琳[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054

出　　处：《光电子．激光》2008年第6期773-775,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60277008);教育部重点资助项目(03147);四川省科技厅资助课题资助项目(04GG021-020-01);国防科技重点实验室基金资助项目(514910501005DZ0201)

摘　　要：以菲涅耳直边衍射理论为基础,通过大量实验;对影响激光辅助化学刻蚀图形效果最为明显的直边、宽缝和交叉三种衍射行为进行研究;获得了光强分布与衍射腐蚀条纹分布的主要特性。实验表明,直边衍射的衍射腐蚀深度最大值位于直接照明区,微微偏离阴影边区域;缝宽对宽缝衍射的腐蚀条纹特性有较大影响;交叉衍射时,受GaAS晶体取向影响,其刻蚀条纹分布不完全对称。The main diffractive.characteristics of laser assisted chemical etching GaAs is analyzed. Based on the Fresnal chffractive theory and experimentation,the light intensity distributing formula of direct seeding diffraction as well as the extensive diffraction and the cross type diffraction are studied,also studied is the diffractive stripe distributing. The result shows that in these direct seeding diffraction, the maximum etched depth is Offset the boundary. In the extensive diffraction, the etched stripes are largely influenced by the width and the intensity of the laser. Also in the cross diffraction, the stripes are not symmetry because of the direction of the crystalline.

关 键 词：激光辅助腐蚀 宽缝衍射 光强分布 半导体 

分 类 号：TN305.7[电子电信—物理电子学]