“Ni-Zn铁氧体颗粒-光刻胶”覆盖的片上射频电感  

Ni-Zn Ferrite-Powder-Mixed-Photoresist Coated on-Chip RF Inductor

作　　者：杨晨[1] 刘锋[1] 任天令[1] 刘理天[1] Albert Wang 岳振星[3] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]伊利诺理工大学,美国芝加哥IL60616 [3]清华大学材料科学与工程系,北京100084

出　　处：《传感技术学报》2008年第2期314-317,共4页Chinese Journal of Sensors and Actuators

基　　金：美国自然科学基金资助(0302449);中国自然科学基金资助(90607021,60729308)

摘　　要：本文报道了采用新型“纳米颗粒-光刻胶”混合旋涂技术制作的片上射频Ni-Zn铁氧体磁膜微电感。成相良好的Ni0.3Zn0.6Cu0.1Fe2O4铁氧体纳米颗粒在光刻胶中均匀混合,再将该混合物涂覆在螺旋电感线圈上,实现电感性能的提升。这种新型低温工艺避免了常规制作铁氧体器件方法带来的高温处理（〉600°C）对集成电路的破坏。与无磁膜覆盖样品对比,铁氧体覆盖电感的电感量在0.1～4GHz提升了14～27%。这是实现高性能、全兼容铁氧体集成片上RFIC电感的一种很有前景的途径。On-chip RF inductors with integrated Ni-Zn ferrite films using a novel nano-powder-mixed-photoresist coating technique is reported. Well synthesized nano-size Ni0.3Zn0. 6Cu0.1Fe2O4 powders are mixed into photoresist and then coated on top of RF inductor spirals for performance improvement. This new lowtemperature fabrication method is developed to eliminate any damage introduced by conventional high temperature process （〉600℃） used in fabricating ferrite-integrated RF IC inductors. Measurement results show that, compared with air-cored inductor, the inductance（L） of ferrite film inductors increases by 14- 27% across 0. 1-4 GHz range. This work demonstrates a promising way to fabricate ferrite-integrated high-performance on-chip RF inductors in IC technology.

关 键 词：铁氧体 电感 射频集成电路 

分 类 号：TN409[电子电信—微电子学与固体电子学]