低温氢化非晶硅薄膜晶体管研究  

Research on Low Temperature a-Si:H Thin Film Transistor

作　　者：易茂祥[1] 毛剑波[1] 陈向东[1] 

机构地区：[1]合肥工业大学理学院,合肥230009

出　　处：《电子器件》2008年第3期766-769,共4页Chinese Journal of Electron Devices

摘　　要：低温薄膜晶体管(TFT)的研究是开发大面积柔性衬底集成电路的基础。采用底栅TFT结构并引入刻蚀阻挡层和钝化保护层,通过工艺参数和工艺流程的设计,研制了100℃低温氢化非晶硅TFT。实验对氢化非晶硅活性层、氮化硅介质层薄膜以及TFT特性进行了测试。所研制的低温TFT导通电流与截止电流之比高达106,场效应电子迁移率为0.825cm2/Vs,表明适于柔性衬底工艺的100℃低温TFT得到了有效实现。Developing flexible substrate integrated circuit is based on developing low temperature thin film transistors （TFTs）. Using bottom-gate construct, we design the layout and process parameters of hydrogenated amorphous silicon （a-Si： H） TFT that are fabricate under low temperature of 100℃. The etch-stopper and passivation layers are introduced and the technological parameters and process are designed. We measure the properties of thin films such as the a-Si：H active layer and SiNx dielectric layer, which are deposited under 100℃ low temperature. We also measure the properties of the TFT. The fabricated TFT has an on-off current ratio of 10^6 and the field effect electron carrier mobility of 0. 825 cm^2/Vs. The results show the effectiveness of implementing TFT down to under 100℃ that is adequate to most of flexible substrates.

关 键 词：薄膜晶体管 低温沉积 底栅 刻蚀阻挡 迁移率 

分 类 号：TN304.055[电子电信—物理电子学]