钒注入制备半绝缘SiC的退火效应(英文)  

Investigation of High Temperature Annealing Effects on Semi-Insulating SiC by Vanadium Ion Implantation

作　　者：王超[1] 张义门[1] 张玉明[1] 谢昭熙[2] 郭辉[1] 徐大庆[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071 [2]深圳市科技和信息局,广东深圳518027

出　　处：《电子器件》2008年第3期770-775,共6页Chinese Journal of Electron Devices

基　　金：Project supported by the National Natural Science Foundation of China ( Grant No 60376001);the National Basic Research Program of China ( Grant No 2002CB311904);the National Defense Basic Research Program of China(Grant No 51327020202)

摘　　要：对钒离子注入p型和n型4H-SiC制备半绝缘层的方法和特性进行了研究。注入层电阻率随退火温度的升高而增加,经过1650℃退火后,钒注入p型和n型SiC的电阻率分别为1.6×1010Ω·cm和7.6×106Ω·cm。借助原子力显微镜对样品表面形貌进行分析,发现碳保护膜可以有效减小高温退火产生的表面粗糙,抑制沟槽的形成。二次离子质谱分析结果表明退火没有导致明显的钒在SiC中的再扩散。即使经过1650℃高温退火,也没有发现钒离子向SiC表面外扩散的现象。Semi-insulating layers are formed by vanadium ion implantation in p- and n-type 4H-SiC. The fabrication processes and characteristics of the implanted layers are reported in detail. A little higher resistivity is obtained by increasing annealing temperature. The resistivity is 1.6 × 10^10Ω cm and 7.6 × 10^6Ω cm after 1 650℃ annealing for V-implanted p- and n-type samples, respectively. The surface morphology studies, based on atomic force microscopy （AFM）, show that carbon capped 4H-SiC has a considerably lower surface roughness than surfaces annealed without the protective cap after high-temperature annealing. The diffusion behavior of vanadium implanted in silicon carbide is investigated by secondary ion mass spectrometry （SIMS）. Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed even after 1 650℃ annealing for both p-and n-type SiC.

关 键 词：半绝缘碳化硅 钒离子注入 退火 碳保护膜 扩散 

分 类 号：TN304.2[电子电信—物理电子学] TN305.3