聚焦离子束研磨Au-Ti-GaAs薄膜引起损伤的研究  

Investigation of Damage Induced in Focused Ion Beam Milling of Au-Ti-GaAs Thin Films

作　　者：谭勇文[1] 徐天伟[2] 谢雪冰[1] 杨卫国[1] 杨海[1] 

机构地区：[1]云南师范大学物理系,昆明650092 [2]云南师范大学计算机系,昆明650092

出　　处：《材料导报（纳米与新材料专辑）》2008年第1期75-77,共3页

基　　金：云南省自然科学基金(2004A00229M)

摘　　要：通过分析纳米孔的透射电子显微镜(TEM)截面图像和蒙特卡罗理论模拟,研究了聚焦离子束(FIB)研磨Au-Ti-GaAs薄膜的基本性能。应用蒙特卡罗方法模拟FIB研磨三层薄膜的损伤深度与离子能量大小的关系,由于材料不同的阻止本领和晶体结构等因素对损伤深度的影响,随着离子能量的增大,损伤深度并非线性增加。同时,溅射物质的重沉积也影响着纳米孔的形貌,对此也作了系统的分析和探讨。The fundamental properties of focused ion beam（FIB） milling Au-Ti-GaAs thin films are investigated by the detailed analysis of the cross-sectional transmission electron microscope（TEM） images of nanoholes and simulation of Monte Carlo theory. The structural damage of the device by FIB irradiation is studied, and the variations in the depth of damaged layer in FIB milling of three-layer thin films with ion energy are simulated by the Monte Carlo method. The depth of damaged layer in different materials is influenced by their stopping power and crystal structure, etc. With the growth of ion energy, the depth of damaged layer in materials does not increase linearly. The topography of nanohole is influenced by the redeposition of sputtered materials and amorphization of material. The possible causes of these results are also discussed.

关 键 词：聚焦离子束 非晶层 蒙特卡罗方法 光电子器件 

分 类 号：O346.5[理学—固体力学] TM914.4[理学—力学]