多晶Al_2O_3薄膜的制备及其红外吸收谱研究  

Preparation and Infrared Spectral Analysis of Polycrystaline Al_2O_3 Thin Films

作　　者：何蕾[1] 王倩[1] 许思友[1] 贾丽娟[1] 王磊[1] 

机构地区：[1]新疆大学物理科学与技术学院,乌鲁木齐830046

出　　处：《材料导报（纳米与新材料专辑）》2008年第1期316-317,324,共3页

基　　金：国家自然科学基金项目(批准号10665002)

摘　　要：高能氩离子束溅射金属铝靶,沉积在单晶Si基片上的非晶薄膜是Al和Al_2O_3的混合物。在空气中对其进行900～1200℃的热处理,成功地制备了以不同结晶形式存在的多晶Al_2O_3薄膜,讨论了不同退火温度对其结晶性能、表面形貌及红外吸收光谱的影响,为Al_2O_3薄膜制备与应用提供了良好借鉴。After high energy Ar＋ ion beam sputters aluminum target,the amorphous thin flims are deposited on Si substrates,which are a mixture of Al and Al2O3. Annealing at 900-1200℃ in the air,the thin films with different crystalline forms are successfully prepared. The influence of annealing temperature on the crystallization, surface morphology and infrared absorption spectra of Al2O3 thin film is discussed. The above analysis offers some references for the preparation and application of Al2O3 thin films.

关 键 词：AL2O3 薄膜 溅射 退火 多晶 

分 类 号：TB43[一般工业技术] O484.1[理学—固体物理]