电子隧道贯穿电场中薄势垒的时间  

Time of Electron Tunneling through Thin Barrier under Electric Field

作　　者：舒启清[1] 李向东[1] 

机构地区：[1]深圳大学应用物理系

出　　处：《深圳大学学报（理工版）》1997年第4期1-6,共6页Journal of Shenzhen University(Science and Engineering)

摘　　要：给出了在矩形势垒区存在电场作用时，隧穿电子波函数的形式解。特别是对于势垒很薄且电场为临界场的情形得到了波函数的具体形式，用它们计算了电子隧穿过程的相位时间和停延时间，并对两种隧穿时间模型作了比较。A formal solution for the wave functions of the tunneling electrons through a rectangular barrier under the electric field is given.In particular,for the thin barrier under the critical electric field the detailed wave functions are obtained,and thus the phase time and the dwell time of the tunneling electron are calculated.The two tunneling time models are compared with each other.

关 键 词：矩形势垒 隧穿时间 相位时间 停延时间 电子隧道 

分 类 号：O441[理学—电磁学]