Thin Emitter Structure Improved Turn-on Characteristics in RSD  

作　　者：梁琳 余岳辉 周郁明 王璐 

机构地区：[1]Department of Electronic Science and Technology, Huazhong University of Science and Technology

出　　处：《Transactions of Tianjin University》2008年第3期182-185,共4页天津大学学报（英文版）

基　　金：National Natural Science Foundation of China(No.50277016 and 50577028);the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20050487044)

摘　　要：The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p^＋-emitter in a certain range, and when the doping concentration is extremely tow, the decrease of the width of p^＋-emitter can obtain a tow forward voltage drop. Thin emitter RSD chips were made by sintering AI on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.The thin emitter structure was introduced into reversely switched dynistor(RSD) to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p+-emitter in a certain range, and when the doping concentration is extremely low, the decrease of the width of p+-emitter can obtain a low forward voltage drop. Thin emitter RSD chips were made by sintering Al on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.

关 键 词：reversely switched dynistor（RSD） thin emitter turn-on characteristics SWITCH forward voltage drop 

分 类 号：TM83[电气工程—高电压与绝缘技术]