掺杂与退火温度对VO_2薄膜性能的影响  

PROPERTY OF VO_2 THIN FILM AFFECTED BY DOPING AND ANNEALING TEMPERATURE

作　　者：周序乐[1] 唐振方[1] 彭舒[1] 

机构地区：[1]暨南大学物理系,广东广州510632

出　　处：《陕西科技大学学报（自然科学版）》2008年第3期75-78,共4页Journal of Shaanxi University of Science & Technology

基　　金：广东省科技攻关项目(2006B13301006)

摘　　要：采用真空蒸发法在普通玻璃表面制备了VO2薄膜,研究了退火温度和掺杂对薄膜表面形貌、晶体结构、电学性能和光学性能的影响.结果表明:经400℃、420℃、450℃、500℃退火得到的VO2薄膜其表面形貌和晶体结构存在明显的差异,其中420℃退火后的薄膜结晶形态良好,主要成分是VO2,在65℃左右表现出明显的电阻突变,常温下在波长1700nm附近薄膜的光透过率达59.9%;在VO2薄膜中掺入W6+,相变温度有所降低,但掺杂使薄膜光透过率降低.The thin films of were prepared by vacuum evaporation method. The surface morphologies, crystal structure, resistance-temperature characteristic was studied. The results show that the phase transition temperature of VO2 thin films, which undergo heat treatment at 400 ℃, 420℃ ,450℃, and 500℃, surface morphologies, crystal structure has significant difference. Thin films annealed at 420℃, exhibit good crystalline states, it＇s main components is VO2, electrical resistance change significantly at about 65 ℃, it＇s transparency is 59.9% at 1 700 nm wavelength. Doping W^6＋ can reduce phase transition temperature, but it leads to the reduction of optical transmittance.

关 键 词：真空蒸发 VO2薄膜 掺杂 相变 光透过率 

分 类 号：O484[理学—固体物理]