区熔单晶硅光晶体管瞬态特性的实验研究  

TRANSIENT BEHAVIOR ANALYSIS OF FLOAT-ZONE SILICON PHOTOTRANSISTORS

作　　者：梁琨[1] 张海君[1] 周地宝[1] 杨茹[1] 韩德俊[1] 张录[2] 宁宝俊[2] 

机构地区：[1]北京师范大学射线束技术与材料改性教育部重点实验室北京师范大学低能核物理研究所暨北京市辐射中心,北京100875 [2]北京大学微电子学院,北京100871

出　　处：《核电子学与探测技术》2008年第2期376-381,共6页Nuclear Electronics & Detection Technology

摘　　要：现有光晶体管具有噪声较低、增益较高(光信号强度适中时)等优点;但它同时也存在线性较差、光信号较弱时增益较低等缺点,限制了它的实际应用。本文报道了一种基于高纯区熔单晶硅和发射结-集电结接近穿通状态的具有高灵敏度、高线性度光晶体管的瞬态特性研究结果,采用负载电阻法和互阻放大器法分别测量响应时间对偏置电压和入射光功率的依赖关系。测量结果显示,器件的上升及下降时间明显依赖于入射光功率的变化,对偏置电压的依赖性较弱;416nW和1128nW入射光功率下大尺寸器件的响应时间分别在170μs和10μs量级,在416nW入射光功率下小尺寸器件的上升时间约为30μs,与理论计算结果具有较好的符合。In this paper, the transient behavior of new float-zone silicon phototransistors, especially the dependence of response-time on incident optical power and bias-voltage were measured and analyzed. According to the measurement results of the devices, the response-time depends more strongly on the incident optical power than bias-vokage; under the incident optical power of 416nW and 1128nW, the response-time of the larger scale device is about 170μs and 10μs respectively; under the incident optical power of 416nW, the response-time of the smaller scale device is about 30μs, which is in accordance with theoretical prediction.

关 键 词：瞬态特性 光晶体管 区熔硅 互阻放大器 

分 类 号：TN32[电子电信—物理电子学]