电子倍增CCD的电荷倍增特性研究  

Charge Multiplication of CCD Based on Electrons Multiplication

作　　者：何伟基[1] 陈钱[1] 屈惠明[1] 秦剑[1] 

机构地区：[1]南京理工大学电子信息工程与光电技术学院,江苏南京210094

出　　处：《光学学报》2008年第6期1161-1166,共6页Acta Optica Sinica

基　　金：国防基础科研(A2620060242);武器装备预先研究(4040508011)资助课题

摘　　要：建立了电子倍增CCD的载流子倍增寄存器的电荷倍增模型,分析了电子倍增CCD的结构特征和载流子倍增寄存器的工作原理及其电荷倍增特性。利用Z域分析方法得到载流子倍增寄存器的电荷倍增传递函数及其幅频响应。计算表明,提高载流子倍增寄存器的电荷倍增系数可以提高电子倍增CCD的幅频响应。同时,用增益起伏因子来分析载流子倍增寄存器的增益起伏特性,得到了电荷倍增率,寄存器级数与增益起伏因子的数值关系。在寄存器级数N=400条件下,当电荷倍增系数α≤0.15时,增益起伏因子随电荷倍增系数增大而增大;而当α≥0.15时,增益起伏因子随电荷倍增系数的增大而减小。通过典型的电子倍增CCD相机的实验验证了建立的模型。A charge multiplication model of charge carrier multiplier（CCM）in electron-multiplication charge-couple-device（EMCCD）was proposed.The EMCCD architecture and the theory of CCM with its performance on electrons multiplication were analyzed.The transform function of charge multiplication in CCM was presented based on Z transform,as well as the amplitude-frequency response.The results show that amplitude-frequency response of CCM increases as the charge multiplication ratio increases.Then gain-fluctuation was studied with the gain-fluctuation factor,and the relation between gain-fluctuation factor,charge multiplication ratio α and CCM stages N was obtained.The numerical results show that the gain-fluctuation factor increases as α increases for α≤0.15 and N=400,but the gain-fluctuation factor decreases as α increases for α≥0.15.Those numerical results are validated with practical experience.

关 键 词：电子倍增CCD 电荷倍增 Z域变换 增益起伏因子 

分 类 号：TN223[电子电信—物理电子学]