CrSi薄膜电阻退火条件的优化  

Optimization of CrSi Resistor Annealing Conditions

作　　者：罗山[1] 张正元[2] 

机构地区：[1]空军工程大学 [2]模拟集成电路国家级重点实验室

出　　处：《微电子学》2008年第3期316-319,共4页Microelectronics

摘　　要：针对CrSi薄膜电阻稳定性,对CrSi薄膜电阻阻值变化的机理进行分析;通过开展退火条件对CrSi薄膜电阻稳定性的影响实验,获得优化的退火条件,将CrSi薄膜电阻的温度系数从原来的100ppm降到20～50ppm,大大提高了电阻网络的稳定性。Based on the mechanism of resistance variation of CrSi resistors, experiments were made to investigate effect of annealing conditions on the stability of CrSi thin-film resistors. Optimal armealing conditions were obtained. Temperature coefficient （TC） of the CrSi resistor was reduced from 100 ppm to 20 -50 ppm, which significantly improved the stability of the resistor network

关 键 词：CrSi电阻 退火条件 温度系数 

分 类 号：TN37[电子电信—物理电子学]