TDC Model for PSG Sacrificial Layer Etching with Hydrofluoric Acid  

氢氟酸和PSG牺牲层腐蚀的TDC模型(英文)

作　　者：吴昌聚[1] 王昊[1] 金仲和[1] 马慧莲[1] 王跃林[1] 

机构地区：[1]浙江大学信息与电子工程系,杭州310027

出　　处：《Journal of Semiconductors》2008年第6期1094-1102,共9页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2006CB300405)~~

摘　　要：HF etching of sacrificial layers with different The existing model cannot fit the experimental data well perimental data increases with etching time. A modified structures, namely channel, bubble, and joint-channel, is studied. The error of etching rate between the existing model and the exmodel considering the diffusion coefficient as a function of HF concentration and temperature is proposed. The etching rate coefficient as a function of temperature and the effect of reaction production are also considered in the modified model. For the joint-channel structure, a new mathematical model for the etching profile is also adopted. Experimental data obtained with channel, bubble, and joint-channel structures are compared with the modified model and the previous model. The results show that the modified model matches the experiments well.对不同结构,即直沟道结构、冒泡结构和组合沟道结构的氢氟酸牺牲层腐蚀进行了研究.以往的牺牲层腐蚀模型和实验结果不能很好地吻合.以往的模型和实验结果的误差随着腐蚀时间的增加而增大.本文提出了一个修正模型,在修正模型中:HF的扩散系数是浓度和温度的函数;腐蚀速率常数是温度的函数;此外还考虑了腐蚀产物对腐蚀过程的影响.对于组合沟道结构,对腐蚀前端形状的描述采用了一个新的数学模型.实验结果和以往的模型以及修正模型进行了对比,结果表明修正模型能够和实验结果吻合得很好.

关 键 词：diffusion coefficient etching rate sacrificial oxide TDC model 

分 类 号：TN303[电子电信—物理电子学]