A Monolithic Integrated CMOS Thermal Vacuum Sensor  

单片集成CMOS电阻真空传感器(英文)

作　　者：张凤田[1] 唐祯安[2] 汪家奇[2] 余隽[2] 

机构地区：[1]中国工程物理研究院电子工程研究所,绵阳621900 [2]大连理工大学电子工程系,大连116024

出　　处：《Journal of Semiconductors》2008年第6期1103-1107,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:90207003,90607003)~~

摘　　要：The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate （MHP） and operating under constant bias voltage conditions was designed. A new monolithic integrating mode was proposed,in which the dielectric and passiva- tion layers in standard CMOS processes were used as sensor structure layers,gate polysilicon as the sacrificial layer,and the second polysilicon layer as the sensor heating resistor. Then, the fabricating processes were designed and the monolithic thermal vacuum sensor was fabricated with a 0. 6μm mixed signal CMOS process followed by sacrificial layer etching technology. The measurement results show that the fabricated monolithic vacuum sensor can measure the pressure range of 2- 10^5 Pa and the output voltage is adjustable.设计了一种工作在恒电压模式的、微热板结构的单片集成电阻真空传感器芯片.提出了一种以CMOS集成电路中的介质层与钝化层为结构层、栅多晶硅为牺牲层、第二层多晶硅为加热电阻的微传感器单芯片集成工艺模式,制定了相应的工艺流程.采用0.6μm CMOS数模混合集成电路工艺,结合牺牲层腐蚀技术实现了单片集成真空传感器的加工,测试结果显示该芯片能够测量2～10^5Pa范围内的气压大小,且输出电压范围可调,验证了单片集成工艺的可行性.

关 键 词：thermal vacuum sensor monolithic integration CMOS micro hotplate 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]