直流反应溅射法制备Y_2O_3隔离层的研究  

Preparation of Y_2O_3 buffer layer by DC reactive sputtering

作　　者：金薇[1] 古宏伟[1] 杨坚[1] 张华[1] 刘慧舟[1] 杨玉卫[1] 

机构地区：[1]北京有色金属研究总院超导材料研究中心,北京100088

出　　处：《低温与超导》2008年第5期38-41,46,共5页Cryogenics and Superconductivity

摘　　要：采用直流反应溅射的方法在具有立方织构的Ni基底上制备出了Y2O3隔离层,并研究了基带温度与H2O分压两个因素对Y2O3薄膜的织构取向以及表面形貌的影响。X射线衍射(XRD)结果和扫描电子显微镜(SEM)的分析表明,在温度为760℃,H2O分压为1.68×10-2Pa的条件下制备出的Y2O3薄膜具有强立方织构,平面内Φ扫描半高宽为7.07°,其表面均匀、致密、无裂纹。Y2O3 film was directly deposited on cube textured metallic Ni substrates by DC reactive sputtering. The influence of the partial pressure of water vapor and the temperature to the texture and surface morphologies of Y2O3 films were investigated. According to XRD and SEM, the fabricated Y2O3 films show strong cube texture which deposited at 760℃ ,under the partial pres- sure of water vapor of 1.68 × 10^-2pa. The FWHM is 7.07°, and surface of Y2O3 films is uniform, dense and crack - free.

关 键 词：氧化钇 隔离层 直流反应溅射 涂层导体 

分 类 号：O484.1[理学—固体物理] TN304.21[理学—物理]