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机构地区:[1]北京航空航天大学理学院物理系,北京100083
出 处:《物理学报》2008年第6期3531-3537,共7页Acta Physica Sinica
基 金:国家教育部留学回国人员科研启动基金(批准号:373155)资助的课题~~
摘 要:依据导电介质的稳态电场理论建立了一种对增益导波型垂直腔半导体激光器注入电流矢量分析的三维解析模型.计算研究了电流密度空间分布及其与顶面电注入环参量之间的相互关联性.结果显示在两极之间存在一个载流子径向分布中心极大的区域.由于激光功率与注入电流之间存在线性关系,因此,要使器件能够获得基模或中心均匀的光强输出以及尽可能低的阈值,应使激光有源层与载流子均匀分布的临界层重合.计算结果对顶发射与底发射结构以及不同环参数下的载流子分布情况及对近场模式形成的影响进行了分析和讨论.Three-dimensional analytical model for analyzing injection current vectors in gain-guided vertical-cavity surface-emitting lasers was developed based on the theory of steady-state electric field. Our calculation covered the spatial distribution of injected current density and its correlation with parameters of the top electric contact ring. The results showed that there exists a region between the two contacts where the radial carrier distribution has a maximum at the center. As the optical power is proportional to the injected current, to obtain fundamental mode or uniform light intensity output with low threshold, the active region should be set to overlap with the boundary layer where the uniform carrier distribution just occurs. The carrier distributions for top-and bottom-emitting configurations with various ring parameters as well as the influences on the near-field modes were discussed.
分 类 号:TN248[电子电信—物理电子学]
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