二氧化锡中氧空位浓度与气敏性能关系的研究  

The Study of the Relation Between Oxygen Hole Concentration and Gas Sensing Characteristics Based on Tin Dioxide

作　　者：龙洁[1] 苏新梅[1] 夏定国[1] 王道[1] 沈云 

机构地区：[1]北京工业大学化学与环境工程学系,100022 [2]北京成人电子信息大学,100016

出　　处：《北京工业大学学报》1997年第4期113-118,共6页Journal of Beijing University of Technology

摘　　要：用氢气还原二氧化锡,通过控制还原时间得到不同氧空位浓度的二氧化锡气敏材料,对其进行了XRD、XWS和SEM分析及比表面测定,讨论了二氧化锡气敏材料的氧空位浓度与其气敏性能的关系,提出通过控制氧空位浓度可以达到提高二氧化锡气敏材料性能和其特性稳定的目的.Tin dioxide gas-sensing materials containing different oxygen hole concentration (SnO2-x) were prepared by reducing Tin dioxide with hydrogen at 160℃. The morphology, average valence of Sn and sixe of crystal grain were determinated by XED, XPS, SEM and specific surface technique. The gas-sensing properties under different gaseous circumstances (n-hexane, hydrogen, ethanol and carbon monoxide) were measured. The relationship between gas sensitivities and the oxygen hole concentration (x value in SnO2-x) was discussed. The x value could be controled for the purpose of better gas sensitivity and better selectivity.

关 键 词：二氧化锡 氧空位浓度 气敏性能 气敏元件 

分 类 号：TN304.21[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]