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作 者:李党国[1] 朱杰武[1] 郑茂盛[1] 冯耀荣[2] 白真权[2]
机构地区:[1]西安交通大学材料科学与工程学院,西安710049 [2]中国石油大学天然气集团公司管材研究所,西安710065
出 处:《金属学报》2008年第6期739-744,共6页Acta Metallurgica Sinica
基 金:国家重点基础研究发展计划项目G1999065004;国家自然科学基金项目50231020资助
摘 要:利用电容测试法和光电流技术研究了X80管线钢在NaHCO_3/Na2CO_3缓冲溶液中所成钝化膜的半导体性能和光电流特性,分析了成膜电位、成膜时间、Cl^-浓度、溶液pH值以及成膜温度等因素对膜光电流响应的影响,结果表明,X80管线钢钝化膜的Mott-Schottky直线部分的斜率和光电流均为正,表明钝化膜呈现n型半导体特性,随着成膜电位的增加,成膜时间延长、溶液pH值升高、成膜温度及溶液中Cl-浓度的减小,Mott-Schottky直线部分的斜率和光电流响应均呈增大趋势,表明钝化膜内施主密度减小。The semi-conductive property and photo-electrochemical characterization of passive film formed on X80 pipeline steel in NaHCO3 / Na2CO3 buffer solutions were investigated. The factors affecting the photo-electrochemical response of the passive fihn, such as formation potential, formation time, Cl^- concentration, pH value of the buffer solution, and formation temperature, etc., were analyzed. The results showed that the slope of Mott-Schottky plot and the photocurrent were positive, which indicated an n-type semi-conductive property of the passive film. With raising the formation potential, prolonging the formation time, increasing the pH value of the solution, and decreasing the formation temperature and Cl^- concentration, the slopes of Mort Schottky plots and the photocurrent both exihibited an increasing tendency, which showed the donor density of the passive film decreased.
分 类 号:TG172.3[金属学及工艺—金属表面处理]
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