常压烧结碳化硅陶瓷的制备及导电性能  

FABRICATION AND CONDUCTIVITY OF SiC CERAMICS BY PRESSURELESS SINTERING

作　　者：王春华[1] 王改民[1] 

机构地区：[1]河南工业大学材料科学与工程学院,郑州450007

出　　处：《中国陶瓷》2008年第7期52-53,共2页China Ceramics

摘　　要：采用常压烧结法制备碳化硅陶瓷,对其显微结构和导电性能进行了分析。研究发现,常压法可获得致密的碳化硅烧结体,具有较低的电阻率,在300～600℃温度范围内表现出明显的负电阻率温度系数。SiC ceramics were prepared by pressureless sintering. The microstructure and conductivity of the sintered samples were studied. It can be concluded that the samples prepared by pressureless sintering was very densification, had lower conductivity, and exhibited negative TCR behavior in the range from 300℃ to 600℃.

关 键 词：常压烧结 碳化硅陶瓷 导电性 

分 类 号：TQ174.758[化学工程—陶瓷工业] TB332[化学工程—硅酸盐工业]