SiC纳米管的研究进展  

Research Development of SiC Nanotubes

作　　者：陈爱华[1] 于金[1] 李瑜璞[1] 于海梁 吴三械[3] 

机构地区：[1]东南大学材料科学与工程学院 [2]梯而卡工业控制设备(上海)有限公司,上海201600 [3]南京大学化学化工学院,江苏南京210008

出　　处：《化工时刊》2008年第6期45-50,共6页Chemical Industry Times

基　　金：江苏省博士后科研资助计划(苏人通[2005]355号)

摘　　要：SiC纳米管是一种宽带隙准一维半导体纳米材料。元素Si属于sp3杂化,C易于形成石墨管状的sp2杂化,由Si、C构成的SiC纳米管的稳定性介于Si纳米管与C纳米管之间。介绍了SiC纳米管研究的最新进展,主要从SiC纳米管的实验和理论研究两个方面进行了综述,并展望了SiC纳米管今后的研究方向。SiC nanotubes are one - dimension nanomaterials with wide band gaps. Sillicon nanotubes is diffcult owning to sp3 hybrization ,whereas sp2 hybridization is easy to form more stable graphite tubular structures. The stability of SiC nanotubes intervence between Si and C nanotubes. The recent researches on SiC nanotubes were reviewed in this article. At the same time, theoretical and experimental research developments were also introduced. At last, the promising prospect of SiC nanotubes were discussed.

关 键 词：SiC纳米管 结构 性能 制备 

分 类 号：TB383.1[一般工业技术—材料科学与工程]