基于新型启动电路的高电源抑制带隙基准源  

Design of High Power Supply Rejection Bandgap Voltage Reference with Novel Startup Circuit

作　　者：翁强[1] 张云珠[1] 吴建辉[1] 张萌[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《固体电子学研究与进展》2008年第2期289-292,303,共5页Research & Progress of SSE

摘　　要：设计了一种基于新型启动电路的高电源抑制(PSR)的带隙基准电压源。启动电路可以在300ns的时间内使电路进入工作状态,同时可在10ns的时间内完全关断电路。可控的启动电路增加了电路使用的灵活性。本基准电路基于新加坡Chartered0.25μmN阱CMOS工艺实现,已应用于射频调谐器当中。测试结果表明,基准电压源在低频段的电源抑制PSR≈123dB,高频段PSR>50dB,电路采用一阶温度补偿技术,在0～100℃的温度范围内输出基准电压的温度系数(TC)约为12ppm/℃。A bandgap voltage reference with novel startup circuit is presented in this paper.It has high power supply rejection：PSR〉120 dB at low frequency and PSR〉50 B at high frequency. The circuit can start up in 300 ns and can be shut down completely in 10 ns. Controllable startup circuit makes the Voltage reference more flexible for use. First-order temperature compensation technology is adopted in this circuit. The temperature coefficient of the circuit is about 12 ppm/℃ between the range of 0-100℃. The proposed CMOS bandgap voltage reference has been implemented in Chartered 0.25 μm N-Well CMOS process and applied in RF receiver.

关 键 词：带隙基准电压源 电源抑制 一阶温度补偿 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]