基于薄膜体声波谐振器的高灵敏度质量传感器  

A Mass Sensor with High Sensitivity Based on Thin Film Bulk Acoustic Resonators

作　　者：马绍宇[1] 韩雁[1] 董树荣[1] 李侃[1] 周海峰[1] 

机构地区：[1]浙江大学微电子与光电子研究所,杭州310027

出　　处：《固体电子学研究与进展》2008年第2期304-307,共4页Research & Progress of SSE

摘　　要：提出了一种针对于生物传感应用的薄膜体声波谐振(Thin film bulk acoustic resonator,FBAR)质量传感器。薄膜体声波谐振器谐振频率非常高(GHz数量级),同时具有很高的品质因数,因此基于这种器件的质量传感器具有非常高的质量灵敏度。提出了三对全金属Al-W层作为布拉格声学反射层的FBAR,采用AlN作为压电层,制备出了固态装配型FBAR传感器。通过淀积不同厚度Al层顶电极,对器件的质量灵敏度进行了分析,得到质量传感器串联谐振频率在2.8GHz附近,质量响应度达到5×10-4ng/Hz/cm2,可以实现分子量级的质量传感。A mass sensor based on thin film bulk acoustic resonator （FBAR）, intended for biomolecular applications, is presented. A high mass sensitivity is achieved for the high operating frequency （several GHz） and quality factor （Q） of the FBAR. A new Bragg acoustic reflector is designed with three Al-W pairs. The solidly mounted film bulk acoustic resonators are fabricated with an AIN layer as the piezoelectric thin film. The mass sensitivity of the device on its surface is investigated by using various thickness of Al top-electrode layer. The mass sensor has a series resonance frequency of 2.8 GHz and mass responsivity of 5× 10^-4ng/Hz/cm^2per area with which molecular-mass sensitivity is achieved.

关 键 词：质量传感器 薄膜体声波谐振器 灵敏度 固态装配型谐振器 

分 类 号：TN45[电子电信—微电子学与固体电子学]