Realization of a Series Contact MEMS Switch with SiON Dielectric Bridge  

作　　者：HU Guangwei LIU Zewen HOU Zhihao LI Zhijian LIU Litian 

机构地区：[1]Institute of Microelectronics, Tsinghua University, Beijing 100084, China

出　　处：《Chinese Journal of Electronics》2008年第2期215-218,共4页电子学报（英文版）

基　　金：This work is supported by the National Natural Science Foundation of China （No.60576048）, and by the Sceince and Technology Committee of Beijing Local Government （No.GYYKW05070014）.

摘　　要：A new series contact MEMS switch is proposed and realized using silicon oxynitride （SiON） as bridge film, which allows the switch to work at lower volto age, insulate the via voltage from the signal path, and avoid the possible crosstalk. The SiON bridge with low tensile stress of 76.8MPa is prepared with Plasma enhanced chemical vapor deposition （PECVD） at the gas flux ratio of 32：12：8 sccm （SiH4： NH3： N2O）. The contact metallic bar and upper electrodes are all located on the rear side of the bridge, which enhances the switch mechanical reliability a lot. The measured results show the pull-in voltage of 23.3V, insertion loss less than 0.31dB and isolation higher than 40.0dB at DC-SGHz. The lifetime of more than 5 × 10^6 cycles has been observed under 0.1W RF power.

关 键 词：RF MEMS MEMS switch Series switch Dielectric bridge SiON. 

分 类 号：TN7[电子电信—电路与系统]