0.18μm NMOSFETS的衬底偏压增强电子注入的电荷泵技术(英文)  

Substrate enhanced electron injection in 0.18μm channel length NMOSFETS by charge pumping

作　　者：王庆学[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所

出　　处：《功能材料与器件学报》2008年第3期702-706,共5页Journal of Functional Materials and Devices

基　　金：Shanghai Postdoctoral Scientific Program(No.06R214210).

摘　　要：分别研究了0.18μm NMOSFETS的传统漏雪崩热载流子(DAHC)和衬底偏压增强电子注入(SEEI)的退化机制。结果表明,在这两个偏置条件下,界面缺陷的产生均是导致热载流子诱导器件性能退化的主导因素。界面缺陷诱导的反型层电子迁移率下降是导致先进深亚微米NMOSFETS电学特性退化的根本原因。Hot carrier degradation under conventional maximum substrate current Ib,max and substrate enhanced electron injection（SEEI） in 0.18μm channel length NMOSFETS is studied.It is found that the interface trap generation is the dominant mechanism for hot carrier degradation under these two stress conditions.As a result,the interface traps induced the inversion layer mobility reduction is responsible for the electrical parameter degradation in deep sub-micron NMOSFETS during SEEI stress.

关 键 词：SEEI 界面缺陷 电荷泵 

分 类 号：TN386.1[电子电信—物理电子学]