气相CdCl_2退火对CdTe多晶薄膜性能的影响  

Influence of vapor CdCl_2 treatment on the properties of CdTe polycrystalline thin films

作　　者：曾广根[1] 黎兵[1] 郑家贵[1] 冯良桓[1] 蔡伟[1] 

机构地区：[1]四川大学太阳能材料与器件研究所,成都610064

出　　处：《功能材料与器件学报》2008年第3期707-711,共5页Journal of Functional Materials and Devices

基　　金：国家高技术研究与发展计划(No.2001AA513010);博士点基金(No.20050610024);四川省应用基础项目(No.2006J13-083)

摘　　要：利用近空间升华法在Ar+O2气氛下沉积了CdTe多晶薄膜,并在气相CdCl2氛围下进行了不同温度的退火,对样品进行了厚度、XRD、SEM、透过谱,σ-T等性能测试,结果表明:退火后CdTe多晶薄膜在(111)面上仍具有择优取向,退火能使晶界钝化,增加再结晶并促进晶粒长大;但对薄膜的透过率没有影响,退火后,暗电导(σdark)增加,电导激活能(Ea)减少。得到了最优化的退火条件。In this work,the CdTe thin films have been treated by CdCl2 after being deposited by close-space sublimation（CSS）.The films were investigated by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,UV/Vis and the relationship of dark conductivities ~ temperature（σ~T）.The results indicate that（111） preferred direction of crystalline grains still exists after annealing;the treatment with CdCl2 can passivate recombination sites on grain boundaries,promote recrystallization and grain growth;The dark conductivities（σdark） increase,and the conductivity activation energy（Ea） decreases with the annealing temperatures increasing.As a result,an optimization anneal condition has been achieved.

关 键 词：CdTe多晶薄膜 退火 太阳电池 

分 类 号：O484[理学—固体物理] TM914.4[理学—物理]