微波功率晶体管的激励功率选取  

Selection of Driving Power for Microwave Power Transistor

作　　者：杜丽军[1] 袁同山[1] 汪邦金[1] 

机构地区：[1]华东电子工程研究所,合肥230031

出　　处：《火控雷达技术》2008年第2期69-72,共4页Fire Control Radar Technology

摘　　要：对于C类工作的固态微波功率管,降低工作电压是提高其可靠性的有效手段。文中就某功率管在工作电压降低的情况下,给出激励功率合理选择所必须考虑的综合因素:输出功率、工作效率、脉内顶降、增益平坦度。并给出影响工作效率、脉内顶降的物理分析和相应的实验数据。With regard to solid-state microwave power transistor operating in class C, reducing the op eration voltage is an efficient means to improve the transistor reliability. This paper discusses the integrated factors, such as output power, operating efficiency, top reducing within pulse, gain flatness which should be taken into consideration for reasonably selecting the driving power for the solid-state microwave transistor operating under condition of voltage reduced. And physical analysis and its corresponding experimental data, which affects the operating efficiency and top drop within pulse are provided.

关 键 词：固态微波功率管 激励功率 工作效率 

分 类 号：TN32[电子电信—物理电子学]