掺锑二氧化锡薄膜的喷雾热解法制备与热处理  

Preparation of SnO_2∶Sb Film by Spray Pyrolysis Technique and Heat Treatment

作　　者：肖功利[1] 杨宏艳[2] 

机构地区：[1]桂林电子科技大学信息与通信学院 [2]桂林电子科技大学计算机与控制学院,广西桂林541004

出　　处：《半导体光电》2008年第3期357-360,364,共5页Semiconductor Optoelectronics

摘　　要：以SnCl4·5H2O和SbCl3为原料，采用喷雾热解法在玻璃基片上制备了掺锑二氧化锡（SnO2：Sb）透明导电薄膜。用X光电子能谱分析仪（XPS）、X射线衍射仪（XRD）和紫外一可见光吸收谱仪分别对样品进行了表征，且对其结构、电学和光学特性作了研究。实验结果表明：薄膜仍为金红石型结构，在Sb的掺杂量为（1．0～1．5）wt％（质量百分比）和基片温度为500℃时，薄膜方阻为0．8～3．5Ω／□，可见光透过率达80％，红外光反射率达到80％。样品在O2，N2中进行热处理，其电导率呈有规律的变化趋势，热处理温度为550℃时，两种样品的电导率变化曲线上同时出现拐点。By using SnCl4·5H2O and SbCl3 as raw materials, the Sb-doped SnO2 transparent conductive thin films were prepared on glass substrates by spray pyrolysis technique. The samples were characterized by using X-ray photoelectron spectroscopy analyzer （XPS）, X-ray diffraction （XRD） as well as ultraviolet-visible light absorption spectrometer. The structural, electrical and optical properties of the films were investigated in detail. The experimental results show that the film is still a rutile structure, while the amount of doped antimony is （1.0-1.5）wt% and substrate temperature is 500℃, the sheet resistance is in the range of 0.8-3.5 Ω/□. The visible light transmittance reaches 80% and infrared light reflectivity reaches 80 %. The changes of conductivity for thin film were a trend, after the samples are annealed in the O2 and N2 atmosphere. When the samples temperature reaches 550 ℃, the turning point at the conductivity curve appears at the same time.

关 键 词：SnO2:Sb薄膜 喷雾热解法 外延生长 光电特性 热处理 

分 类 号：TN304.21[电子电信—物理电子学]