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机构地区:[1]军代表室,天津300381 [2]中国电子科技集团公司第十八研究所,天津300381
出 处:《电源技术》2008年第6期379-382,共4页Chinese Journal of Power Sources
摘 要:研究了区熔N型(Bi2Te3)x-(Bi2Se3)1-x晶体通过热压方法制备BiTe基材料及其性能。对所获得样品进行了密度分析、抗弯强度测试、扫描电子显微镜(SEM)分析以及温差电性能测试。实验结果表明由热压工艺制备的BiTe基材料在垂直于压力的方向具有良好的取向性和温差电性能。优化的制备工艺条件下获得的热压样品在垂直热压压力方向上的热电性能优于区熔材料。热压材料的机械强度要明显优于区熔材料,且前者的机械强度随着热压压力的增加而增大。N-type BiTe-based thermoelectric materials were prepared by hot pressing method made from zone-melting (Bi2Te3)x-(Bi2Se3)1-x crystal ingot, and its performance was studied, such as densities, mechanical strengths microscopic appearances, orientation and thermoelectric performances. The test results show that the orientation and thermoelectric performances of the sample made by hot pressing in vertical direction to the pressure is excellent. The thermoelectric properties of hot-pressed sample under the optimal technical process in vertical direction of pressure are more preferable than zone-melted material. The bending strength of hot-pressed sample is better than zone-melted materials, and the former becomes larger with the increase of pressure.
关 键 词:BiTe基温差电材料 热压 区熔 性能
分 类 号:TM913[电气工程—电力电子与电力传动]
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