用1／f噪声表征VDMOS器件的抗辐照性能  

Characterization of VDMOS' Anti-Radiation Performance with 1/f Noise

作　　者：王党会[1] 许天旱[1] 谢端[2] 王党朝[3] 

机构地区：[1]西安石油大学材料科学与工程学院,西安710065 [2]西安邮电学院,西安710061 [3]咸阳师范学院,陕西咸阳712000

出　　处：《半导体技术》2008年第7期571-574,共4页Semiconductor Technology

基　　金：总装“十一五”国防预研项目

摘　　要：介绍了用于航空航天DC/DC转换器中的VDMOS器件和电离辐照前后低频1/f噪声的变化。研究了电离辐照情况下VDMOS器件的阈值电压漂移、跨导的退化对1/f噪声幅值、γ值的影响。结合实验,比较器件1/f噪声幅值和γ值在辐照前后的变化,对其抗辐照性能做表征研究。对VDMOS器件在辐照前后的变化做了分析,从γ值分形的角度简要说明辐照对器件产生的影响。VDMOS are used in DC/DC converters for space aircraft. Variations of its low frequency 1/f noise pre-and post-radiation are presented. Effects of VDMOS drift of threshold voltage and debasement of transconductance on the values of 1/f noise and γ were studied on the condition of radiation. Combined with the experiments, characterisation of the anti-radiation performance was done by comparing the values of 1/f noise and γ pre- and post-radiation. Researches on the γ values show that radiation has obvious influence on the performance of the device, and the research results are illustrated based on fractal property.

关 键 词：纵向双扩散金属氧化物半导体 辐照 1/f噪声 γ值 

分 类 号：TP211.51[自动化与计算机技术—检测技术与自动化装置]