电压衬度像技术在IC失效分析中的应用  

Application of Passive Voltage Contrast in IC Failure Analysis

作　　者：陈琳[1] 汪辉[1] 

机构地区：[1]上海交通大学微电子学院,上海201203

出　　处：《半导体技术》2008年第7期581-584,共4页Semiconductor Technology

摘　　要：电压衬度像(PVC)技术是用于定位集成电路不可见缺陷的一种有效的失效分析方法,结合聚焦离子束(FIB)精准的微切割技术,可将PVC技术应用于长金属互连线的缺陷定位。主要介绍了PVC技术及其原理,概述了如何在SEM和FIB中应用其工作原理有效地定位IC缺陷位置,并就接触孔/通孔缺陷以及规则长金属导线的失效实例展开讨论和分析。PVC is an effective failure analysis method in the invisible IC defect localization. With the help of FIB precise micro-cutting function, PVC can be used in defect localization for long interconnect metals. PVC process and its principle were introduced, and how to apply PVC methodology on SEM and FIB to locate the defect in IC was described. The failure analysis of CT （contact） hole, via defect, long metal line were discussed and analyzed.

关 键 词：电压衬度像 扫描电子显微镜 聚焦离子束 失效分析 

分 类 号：TN360[电子电信—物理电子学]