放电等离子烧结工艺合成Ti3SiC2材料  

Synthesis of Ti_3SiC_2 Material by Spark Plasma Sintering (SPS) Technique

作　　者：周卫兵[1] 梅炳初[2] 朱教群[1] 

机构地区：[1]武汉理工大学材料科学与工程学院 [2]武汉理工大学材料复合新技术国家重点实验室,湖北武汉430070

出　　处：《材料科学与工程学报》2008年第3期353-356,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(50572080);博士启动基金资助项目(471-38650142)

摘　　要：以铝为助剂结合放电等离子烧结工艺,在较低温度下快速制备出高纯致密Ti3SiC2块体材料。掺加适量铝能加快Ti3SiC2的反应合成,提高制备材料的纯度,并促进Ti3SiC2晶体的生长和材料的快速烧结致密。在升温速率为80℃/min,z轴压力为30MPa时,材料制备的最佳温度为1250-1300℃。所制备材料经XRD、SME和EDS分析表明不含TiC和SiC等杂质相,Ti3SiC2为5-15μm的板状结晶,断裂韧性为6.8±0.2MPa.m1/2,弯曲强度为420±10MPa。Ti3 SiC2 Ynaterial with high purity and density has been fabricated by spark plasma sintering with the addition of Al. Proper addition of Al accelerated the synthesis reaction and the crystal growth of Tia SiC2 ,and increased the purity of synthesized samples. At the heating rate of 80℃/min and under the pressure of 30MPa, the ideal synthesis temperature ranged from 1250 ℃ to 1300℃. Ti3SiC2 so obtained was in plane-shape with the grain size of 5- 15μm： The fracture toughness and flexural strength of Ti3 SiC2 were 6.8±0.2MPa · m^1/2 and 420± 10MPa, respectively.

关 键 词：铝 TI3SIC2 制备 放电等离子烧结 

分 类 号：TF123.3[冶金工程—粉末冶金]