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机构地区:[1]郧阳师范高等专科学校物理系,湖北丹江口市442700
出 处:《光电子技术》2008年第2期113-115,共3页Optoelectronic Technology
基 金:湖北省教育研究基金资助项目(2003298)
摘 要:通过溶胶-凝胶方法分别在ITO和玻璃表面制备了TiO2∶Cu薄膜,研究了TiO2∶Cu薄膜在365 nm的紫外光照射下的光致超亲水性及在Na2S04电解溶液中的循环伏安行为,研究了掺杂浓度对薄膜的光致超亲水性的影响。结果表明,在紫外光的照射下,TiO2∶Cu薄膜电极表现光电化学过程及光致超亲水性,原因在于在紫外光照射下TiO2∶Cu薄膜的超亲水性变化与产生TiO3+的过程引起的表面微观结构变化存在一定的内在联系。与纯TiO2薄膜相比,掺入适量Cu(Cu/Ti摩尔比:0.002)后的薄膜具有更好的光致超亲水性和较强的峰电流。经1 h的紫外光照射后,该薄膜的水接触角接近于0°,峰电流达1.754μA。TiO2: Cu thin films were prepared by a sol-gel method on ITO and glass substrates. The hydrophilicity change under UV light was investigated by the determination of the contact angle of water. Cyclic voltammetric behavior of ITO/TiO2 electrode under ultraviolet (UV) illumination was measured in the solution of Na2SO4. Photoelectrochemical processes for TiO2 thin film electrode under UV illumination can be observed. It is assumed that the change of hydrophilicity of the films was related with the changes of surface structure when the film was irradiated by UV light. With proper amount of Cu(mol ratio of Cu/Ti:0. 002) doped thin films showed more photo-induced superhydrophilicity and stronger peak current than pure TiO2 thin film. After UV irradiation for I h, the water contact angle of the film was nearly 0° and the peak current reaches 1. 754 μA.
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