X射线分幅相机不同直流偏置下的皮秒选通特性  

Picosecond gated characteristics at different DC bias of X-ray framing camera

作　　者：曹柱荣[1] 张海鹰[1] 易荣清[1] 黎航[1] 董建军[1] 谷渝秋[1] 刘慎业[1] 丁永坤[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《强激光与粒子束》2008年第6期948-950,共3页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：利用SILEX-I装置打靶产生的亚皮秒X射线源研究了X射线分幅相机不同直流偏置下的选通特性。建立了曝光时间的X射线点源测量方法,基于系统原理定义了相机的动态增益。实验发现:与不加直流偏置相比,加载-100 V时曝光时间展宽10 ps,动态增益增大到4.5倍。动态增益增幅较理论模拟值偏大,加载负偏压可能改变了初始光电子的动力学特性。The picosecond gated characteristics of X-ray framing camera at different DC bias are examined using sub-ps X-ray source produced by SILEX-I facility. The point-source measurement of XFC exposure-time is set up. The dynamic gain is defined based on the XFC principium. The experiment shows that the widening of exposure-time is 10 ps at DC bias of -100 V, and the dynamic gain increases by a factor of 3.5. The amplitude of exposure-amount measured is on the high side at DC negative bias, It is possible that the DC bias influences the dynamics of original photoelectrons, and induces dynamic gain exaltation.

关 键 词：X射线分幅相机 选通特性 曝光时间 动态增益 SILEX-I装置 X射线点源 

分 类 号：O434.12[机械工程—光学工程]