多壁碳纳米管修饰电极测定氨氯地平  

Voltammetric Determination of Amlodipine at Multi-wall Carbon Nanotube Modified Electrode

作　　者：明亮[1] 习霞[1] 陈婷婷[1] 刘杰[2] 

机构地区：[1]南通大学化学化工学院 [2]江苏省神经再生重点实验室,南通226001

出　　处：《应用化学》2008年第7期829-833,共5页Chinese Journal of Applied Chemistry

基　　金：南通市应用研究科技计划项目(K2006018)

摘　　要：运用循环伏安法、线性扫描伏安法及示差脉冲伏安法等测试技术研究了氨氯地平在多壁碳纳米管修饰玻碳电极上的电化学行为，建立了一种直接测定氨氯地平的电化学分析方法。结果表明，与裸玻碳电极相比，多壁碳纳米管修饰电极能显著提高氨氯地平的氧化峰电流。在优化的实验条件下，氧化峰电流与氨氯地平浓度在1．0×10^-7～7．5×10^-5mol／L范围呈现良好的线性关系，检出限为4．0×10^-8mol／L，对1．0×10^-5mol／L氨氯地平溶液平行测定10次的RSD为4．2％。测定了氨氯地平片剂中氨氯地平的含量，结果满意。The electrochemical behavior of amlodipine （AM） at the multi-wall carbon nanotube （MWCNT） modified glassy carbon electrode （GCE） was investigated by cyclic vohammetry （CV） , linear sweep voltammetry（LSV） and differential pulse voltammetry （DPV）. The experimental parameters were optimized, and a direct electroanalytical method for determining AM was developed. The oxidation peak current of AM was enhanced significantly at the MWCNT modified GCE, in contrast to that at the bare GCE. Under the optimized experimental conditions, the oxidation peak current varied linearly with the concentration of AM over a range from 1.0 × 10^-7 to 7.5 × 10^-5 mol/L with a detection limit of 4. 0 × 10^-8 mol/L. The relative standard deviation（RSD） for 1.0 ×10^-5 mol/L AM was approximately 4. 2% （n = 10）. AM in pharmaceutical formulations was determined by method.

关 键 词：氨氯地平 伏安测定 碳纳米管 化学修饰电极 

分 类 号：O657.1[理学—分析化学]