ZnO及掺杂ZnO薄膜的研究进展  

Research advances on doped ZnO thin films

作　　者：赵跃智[1] 张俊[1] 丁世敬[2] 

机构地区：[1]洛阳理工学院材料系 [2]中国人民解放军61489部队

出　　处：《化工科技》2008年第2期60-64,共5页Science & Technology in Chemical Industry

摘　　要：ZnO薄膜是一种Ⅱ-Ⅵ族的宽禁带半导体材料，具有优异的物理化学性能。通过对薄膜的掺杂，可以改善其性能或赋予其新的性能，使其应用更加广泛。作者综述了ZnO薄膜的制备方法，比较了各种制备方法的优缺点，重点探讨了ZnO及其掺杂薄膜在压电、光电、气敏及磁性能方面的研究，并对今后的研究方向进行了展望。ZnO thin films are a kind of Ⅱ-Ⅵ semiconductors with a wide direct band gap and excellent physical and chemical properties. Doped thin films can improve their functions or give them the new functions and make their applications more extensive. In this paper,preparation technique of ZnO thin films was reviewed and their advantages and disadvantages were pointed out. And the piezoelectric, optical, electrical, gas-sensing and ferromagnetic properties of ZnO and doped ZnO thin films were studied in detail. The applications of ZnO thin films were summarized,and an outlook to the research direction of aftertime was carried on.

关 键 词：掺杂ZnO薄膜 制备工艺 性能 

分 类 号：TN304.21[电子电信—物理电子学]