以SnO_2为支持体的^(68)Ge-^(68)Ga发生器的研究  

STUDY OF 68 Ge 68 Ga GENERATOR WITH SnO 2 SUPPORT

作　　者：李宗全[1] 汪勇先[1] 

机构地区：[1]中科院上海原子核研究所放射性药物中心

出　　处：《同位素》1997年第2期98-102,共5页Journal of Isotopes

摘　　要：研究了六种ＳｎＯ２对６８Ｇｅ和６８Ｇａ的吸附性能。以性能较好的一种为支持体制备６８Ｇｅ－６８Ｇａ发生器，并观察了淋洗条件对其性能的影响。以１．０ｍｏｌ／ＬＨＣｌ为淋洗剂，所得４．０ｍＬ淋洗剂中６８Ｇａ的收率可达６０％，６８Ｇｅ漏穿小于０．０４％，且９５％可被洗下的６８Ｇａ集中在前３．０ｍＬ淋洗液中。The absorption properties of the 68 Ge and 68 Ga in six kinds of SnO 2 materials are studied. One of them is selected as the support for the 68 Ge 68 Ga generator. The distribution coefficient of 68 Ge and 68 Ga between 1.0 mol/L HCl and SnO 2 are >1.0×10 4 and 2.0, respectively. About 60% of 68 Ga can be eluated with 4.0 mL eluate of 1.0 mol/L HCl. The breakthrough of 68 Ge is less than 0.04% and 95% of the eluated 68 Ga is concentrated in the first 3.0 mL eluate. The content of Sn in eluate is less than 0.2×10 -6 .

关 键 词：放射性药物 二氧化锡 锗68 镓68 同位素发生器 

分 类 号：TQ463.7[化学工程—制药化工]