准一维无序系统的电子结构  

THE ELECTRONIC STRUCTURE OF QUASI ONE DIMENSIONAL DISORDERD SYSTEM

作　　者：徐慧[1] 

机构地区：[1]中南工业大学应用物理系

出　　处：《计算物理》1997年第4期574-576,共3页Chinese Journal of Computational Physics

基　　金：中国有色金属工业总公司资助

摘　　要：利用负本征值理论的态密度计算方法，研究了准一维双链无序系统的电子结构。并针对系统大小，对角和非对角无序程度等各种参数，探讨了电子的局域化、系统能量分布范围等问题。在引进无序参量后，对角无序主要引起电子局域态的增多，而非对角无序则使系统的能量分布范围发生变化。The electronic structure of quasi one dimensional disordered system is studied by the computation of the density of electronic states with the help of the negative eigenvalue theory. The localization of electronic states and the distribution zone of the system energy are discussed to the parameters of system size and the disordered degree of diagonal and non diagonal elements. The electronic localized states are increased with the enhancing of the diagonal disordered degree and the distribution zone of the system energy is widened with the enhancing of the non diagonal disordered degree.

关 键 词：准一维 无序系统 电子态密度 电子结构 无序材料 

分 类 号：O481.1[理学—固体物理]