Sm:GdVO_4晶体的生长及光谱性能研究  

Growth and Spectroscopic Properties of Sm:GdVO_4 Crystal

作　　者：何晓明[1] 张连翰[1] 陈光珠[1] 何明珠[1] 杭寅[1] 

机构地区：[1]中国科学院上海光学机密机械研究所,上海201800

出　　处：《人工晶体学报》2008年第3期514-518,共5页Journal of Synthetic Crystals

摘　　要：应用中频感应提拉法生长出掺杂浓度为2%原子分数的Sm:GdVO4晶体,研究了室温下c轴方向Sm:GdVO4晶体的吸收和荧光光谱。通过J-O理论计算出强度参数(Ωt),同时计算了对应于4G5/2能级的自发跃迁几率、荧光分支比和辐射寿命。通过荧光光谱计算了对应于566、604和646nm三个发射峰对应的发射截面,结果表明,Sm:GdVO4在604nm的发射截面最大,是掺Sm:YAP在607nm处发射截面的4.4倍。The 2at.% Sm：GdVO4 crystal was grown by the Czochralski method.The Absorption and fluorescence spectra along the crystallographic axis c were measured at room temperature.Judd-Ofelt theory was used to calculate the intensity parameters（Ωt）,the spontaneous emission probability,the branching ratio and the radiative lifetime of the state ^4G5/2.The peak emission cross-sections were also estimated at 566,604 and 646 nm wavelengths.The emission cross-section at 604 nm is 7.62×10^-21 cm^2,4.4 times lager than that in Sm：YAP at 607 nm.

关 键 词：Sm:GdVO4晶体 光谱性能 J-O理论 

分 类 号：O78[理学—晶体学]