高质量LiGaO2晶体的提拉法生长及表征  

Growth and Characterization of High Quality LiGaO_2 Crystal by Czochralski Method

作　　者：黄涛华[1] 周圣明[1] 滕浩[1] 林辉[1] 王军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《人工晶体学报》2008年第3期524-527,523,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60676004);上海市浦江计划(05PJ14100)资助

摘　　要：采用提拉法成功地生长了高质量的LiGaO2单晶体,生长过程中没有观察到挥发现象。通过四晶X射线衍射、化学腐蚀、光学显微、透过光谱以及原子力显微镜对晶体的质量进行了表征。结果表明:晶体中无包裹物及气泡,具有很高的质量,(001)面晶片的摇摆曲线半高宽仅为16.2arcsec,正交的(001)、(100)及(010)三个晶面具有不同的腐蚀形貌,其位错密度均低于104/cm2;LiGaO2晶体的吸收边约为220nm;化学机械抛光后的晶片表面非常光滑,其均方根粗糙度仅为0.1nm(5×5μm2)。High-quality LiGaO2 crystal was grown by modified Czochralski method,and there was no volatilization during the crystal growth.The crystal was characterized by four-crystal X-ray diffraction,chemical etching,optical microscope,transmission spectra and atomic force microscope（AFM）.The results showed that the as-grown crystal has very high quality and there are no inclusions and bubbles in the crystal.The FWHM of LiGaO2（001）slice is only 16.2 arcsec.The dislocation densities on（001）,（100）and（010）planes are all less than 10^4 /cm^2.The Absorption edge of LiGaO2 crystal is about 220 nm.The chemico-mechanically polished LiGaO2 slice shows very smooth surface,and the root-mean-square roughness is only 0.1 nm across the 5×5 μm^2 area.

关 键 词：提拉法 LiGaO2 化学腐蚀 透过光谱 AFM 

分 类 号：O78[理学—晶体学]